BYV74F-400 Datasheet | NXP Semiconductors

Features - Low forward volt drop - Fast switching - Soft recovery characteristic - High thermal cycling performance - Isolated mounting tab BYV74F series SYMBOL QUICK REFERENCE DATA VR = 300 V/ 400 V/ 500 V a1 1 k 2 a2 3 VF ≤ 1.12 V IO(AV) = 20 A trr ≤ 60 ns SOT199 GENERAL DESCRIPTION Dual, mon cathode, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYV74F series is supplied in the conventional leaded SOT199 package. PINNING PIN 1 2 3 tab DESCRIPTION anode 1 cathode anode 2 isolated case LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IFRM IFSM PARAMETER Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting)1 Repetitive peak forward current per diode Non-repetitive peak forward current per diode. Storage temperature Operating junction temperature CONDITIONS BYV74F Tmb ≤ 117˚C square wave; δ = 0.5; Ths ≤ 54 ˚C t = 25 µs; δ = 0.5; Ths ≤ 54 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRM(max) -40 MIN. -300 300 300 300 MAX. -400 400 400 400 20 30 150 160 150 150 -500 500 500 500 UNIT V V V A A A A ˚C ˚C Tstg Tj ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.H. ≤ 65 % ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V Cisol Capacitance from T2 to external f = 1 MHz heatsink - 22 - p F 1 Neglecting switching and reverse current losses. September 1998 1 Rev 1.300 Philips Semiconductors Product specification Dual rectifier diodes ultrafast THERMAL RESISTANCES SYMBOL Rth j-hs PARAMETER Thermal resistance junction to heatsink CONDITIONS both diodes conducting with heatsink pound without heatsink pound per diode with heatsink pound without heatsink pound in free...