BYV74W-300 Datasheet | NXP Semiconductors

Features - Low forward volt drop - Fast switching - Soft recovery characteristic - High thermal cycling performance - Low thermal resistance BYV74W series SYMBOL QUICK REFERENCE DATA VR = 300 V/ 400 V/ 500 V a1 1 k 2 a2 3 VF ≤ 1.12 V IO(AV) = 30 A trr ≤ 60 ns SOT429 (TO247) GENERAL DESCRIPTION Dual, mon cathode, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYV74W series is supplied in the conventional leaded SOT429 (TO247) package. PINNING PIN 1 2 3 tab DESCRIPTION anode 1 cathode anode 2 cathode LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IFRM IFSM PARAMETER Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting)1 Repetitive peak forward current per diode Non-repetitive peak forward current per diode. Storage temperature Operating junction temperature CONDITIONS BYV74W Tmb ≤ 136˚C square wave; δ = 0.5; Tmb ≤ 94 ˚C t = 25 µs; δ = 0.5; Tmb ≤ 94 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRM(max) -40 MIN. -300 300 300 300 MAX. -400 400 400 400 30 30 150 160 150 150 -500 500 500 500 UNIT V V V A A A A ˚C ˚C Tstg Tj THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS per diode both diodes conducting in free air. MIN. TYP. 45 MAX. 2.4 1.4 UNIT K/W K/W K/W 1 Neglecting switching and reverse current losses. April 1998 1 Rev 1.000 Philips Semiconductors Product specification Dual rectifier diodes ultrafast ELECTRICAL CHARACTERISTICS characteristics are per diode at Tj = 25 ˚C unless otherwise stated SYMBOL VF IR Qs trr Irrm Vfr PARAMETER Forward voltage Reverse current Reverse recovery charge Reverse recovery time Peak reverse recovery current Forward recovery voltage CONDITIONS IF = 15 A; Tj = 150˚C IF =...