BYV79-100 Datasheet | NXP Semiconductors

DESCRIPTION Glass passivated high efficiency rectifier diodes in a plastic envelope, featuring low forward voltage drop, ultra-fast recovery times and soft recovery characteristic. They are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and switching losses are essential. BYV79 series QUICK REFERENCE DATA SYMBOL VRRM VF IF(AV) trr PARAMETER BYV79Repetitive peak reverse voltage Forward voltage Forward current Reverse recovery time MAX. 100 100 0.9 14 30 MAX. 150 150 0.9 14 30 MAX. 200 200 0.9 14 30 UNIT V V A ns PINNING - TO220AC PIN 1 2 tab DESCRIPTION cathode (k) anode (a) cathode (k) PIN CONFIGURATION tab SYMBOL a k LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IF(AV) PARAMETER Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage1 Average forward current2 square wave; δ = 0.5; Tmb ≤ 120 ˚C sinusoidal; a = 1.57; Tmb ≤ 122 ˚C CONDITIONS MIN. -40 -100 100 100 100 MAX. -150 150 150 150 14 12.7 20 28 150 160 112 150 150 -200 200 200 200 UNIT V V V A A A A A A A2s ˚C ˚C IF(RMS) IFRM IFSM I2t Tstg Tj RMS forward current Repetitive peak forward current t = 25 µs; δ = 0.5; Tmb ≤ 120 ˚C Non-repetitive peak forward t = 10 ms current t = 8.3 ms sinusoidal; with reapplied VRWM(max) I2t for fusing t = 10 ms Storage temperature Operating junction temperature 1 Tmb ≤ 145˚C for thermal stability. 2 Neglecting switching and reverse current losses. October 1994 1 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. in free air - BYV79 series TYP. 60 MAX. 2.0 - UNIT K/W K/W STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL VF IR PARAMETER Forward voltage Reverse current CONDITIONS IF = 14 A; Tj = 150˚C...