BYV79E-150 Datasheet | NXP Semiconductors

FEATURES - Low forward volt drop - Fast switching - Soft recovery characteristic - Reverse surge capability - High thermal cycling performance - Low thermal resistance BYV79E series SYMBOL QUICK REFERENCE DATA VR = 150 V/ 200 V VF ≤ 0.9 V IF(AV) = 14 A IRRM ≤ 0.2 A trr ≤ 30 ns k 1 a 2 GENERAL DESCRIPTION Ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYV79E series is supplied in the conventional leaded SOD59 (TO220AC) package. PINNING PIN 1 2 tab DESCRIPTION cathode anode cathode SOD59 (TO220AC) tab LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IF(AV) IFRM IFSM PARAMETER Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average forward current CONDITIONS BYV79E Tmb ≤ 145˚C MIN. -40 -150 150 150 150 MAX. -200 200 200 200 14 28 150 160 0.2 0.2 150 150 UNIT V V V A A A A A A ˚C ˚C IRRM IRSM Tstg Tj square wave δ = 0.5; Tmb ≤ 120 ˚C Repetitive peak forward current t = 25 µs; δ = 0.5; Tmb ≤ 120 ˚C Non-repetitive peak forward t = 10 ms current t = 8.3 ms sinusoidal; with reapplied VRWM(max) Repetitive peak reverse current tp = 2 µs; δ = 0.001 Non-repetitive peak reverse tp = 100 µs current Storage temperature Operating junction temperature 1. Neglecting switching and reverse current losses. ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model; C = 250 p F; R = 1.5 kΩ MIN. MAX. 8 UNIT k V July 1998 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. in free air - BYV79E series TYP. 60 MAX....