BYV79EB-200 Datasheet | NXP Semiconductors

Features - Low forward volt drop - Fast switching - Soft recovery characteristic - Reverse surge capability - High thermal cycling performance - Low thermal resistance BYV79EB series SYMBOL QUICK REFERENCE DATA VR = 150 V/ 200 V VF ≤ 0.9 V IF(AV) = 14 A IRRM = 0.2 A trr ≤ 30 ns k tab a 3 GENERAL DESCRIPTION Ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYV79EB series is supplied in the surface mounting SOT404 package. PINNING PIN 1 2 3 tab DESCRIPTION no connection cathode 1 anode SOT404 tab 2 cathode 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IF(AV) IFRM IFSM PARAMETER Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average rectified forward current 2 Repetitive peak forward current per diode Non-repetitive peak forward current CONDITIONS BYV79EB Tmb ≤ 145˚C -40 MIN. -150 150 150 150 14 28 150 160 0.2 0.2 150 150 MAX. -200 200 200 200 UNIT V V V A A A A A A ˚C ˚C IRRM IRSM Tstg Tj square wave δ = 0.5; Tmb ≤ 120 ˚C t = 25 µs; δ = 0.5; Tmb ≤ 120 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRM(max) Repetitive peak reverse current tp = 2 µs; δ = 0.001 Non-repetitive peak reverse tp = 100 µs current Storage temperature Operating junction temperature 1. It is not possible to make connection to pin 2 of the SOT404 package 2. Neglecting switching and reverse current losses. ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model; C = 250 p F; R = 1.5 kΩ MIN. MAX. 8 UNIT k V July 1998 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged THERMAL...