BYX107G Datasheet | NXP Semiconductors

- Glass passivated - High maximum operating temperature - Low leakage current - Excellent stability - Guaranteed avalanche energy absorption capability - Recovery times ranging from 600 to 50 ns - Soft-recovery switching characteristics - pact construction. APPLICATIONS - High-voltage power supply units in, for example, X-ray or radar systems. DESCRIPTION Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. The package is designed to be used in an insulating medium such as resin, oil or SF6 gas. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VRW IF(AV) PARAMETER repetitive peak reverse voltage working reverse voltage average forward current BYX105G BYX106G BYX107G BYX108G average forward current BYX105G BYX106G BYX107G BYX108G CONDITIONS MARKING handbook, halfpage BYX105G; BYX106G; BYX107G; BYX108G k a MSB026 Fig.1 Simplified outline (SOD88A) and symbol. TYPE NUMBER BYX105G BYX106G BYX107G BYX108G red CATHODE BAND black green violet MIN. - - 5 MAX. 4.5 650 575 480 340 460 400 340 240 UNIT k V k V m A m A m A m A m A m A m A m A averaged over any 20 ms period; Toil = 25 °C - - - - averaged over any 20 ms period; Toil = 70 °C - - - - 2000 Jan 13 Philips Semiconductors Product specification High-voltage soft-recovery controlled avalanche rectifiers SYMBOL IFSM BYX105G BYX106G BYX107G BYX108G PRSM Tstg Tj non-repetitive peak reverse power dissipation storage temperature junction temperature t = 10 µs; triangular pulse; Tj = Tj max prior to surge PARAMETER non-repetitive peak forward current CONDITIONS t = 10 ms; half sinewave; Tj = 45 °C prior to surge BYX105G; BYX106G; BYX107G;...