BZA109 Datasheet | NXP Semiconductors

URES - ESD rating >8 k V, according to IEC1000-4-2 - SOT163-1 surface mount package - mon anode configuration - Non-clamping range 0.5 to 6.8 V - Maximum non-repetitive peak reverse power dissipation: 25 W at tp = 1 ms - Maximum clamping voltage at peak pulse current: 10 V at IZSM = 2.5 A. APPLICATIONS - For 9-bit wide undershoot/ overshoot clamping and fast ESD transient suppression in: - puters and peripherals - Audio and video equipment - Business machines - munication systems - Medical equipment. IN8 9 12 OUT8 11 OUT9 IN9 10 handbook, 4 columns PINNING PIN 1 to 5 6 and 15 7 to 10 11 to 14 16 to 20 DESCRIPTION input (IN1 to IN5) mon anode (GND) input (IN6 to IN9) output (OUT9 to OUT6) output (OUT5 to OUT1) DESCRIPTION 9-fold monolithic transient voltage suppressor in an SO20; SOT163-1 surface mount package. The device is ideal in situations where board space is a premium. IN1 IN2 IN3 IN4 IN5 GND IN6 IN7 1 2 3 4 5 20 OUT1 19 OUT2 18 OUT3 17 OUT4 16 OUT5 20 19 18 17 16 15 14 13 12 11 SO20 6 7 8 15 GND 14 OUT6 13 OUT7 MBK268 Fig.1 Pin configuration for SO20 (SOT163-1) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode IZ IF IFT IFSM IZSM Ptot PZSM Tstg Tj Notes 1. Current is flowing from input to corresponding output. 2. One or more diodes loaded. 1997 Dec 01 2 working current continuous forward current feed-through current non-repetitive peak forward current non-repetitive peak reverse current total power dissipation non-repetitive peak reverse power dissipation storage temperature operating junction temperature Tamb = 25 °C Tamb = 25 °C Tamb = 25 °C; note 1 tp = 1 ms; square pulse tp = 1 ms; square pulse; see Fig.2 Tamb ≤ 25 °C; note 2; see Fig.3 tp = 1 ms; square pulse; see Fig.4 - - - - - - - - 65 - 65 20 100 100 4.5 2.5 1.25 25 +150 +150 m A m A m A A A W W °C °C PARAMETER CONDITIONS MIN. MAX. UNIT Philips...