BZA109TS Datasheet | NXP Semiconductors

URES - ESD rating > 8 k V, according to IEC1000-4-2 - SOT339 surface mount package - mon anode configuration - Non-clamping range 0 - 6.8 V, negative clamping range <0.5 V, positive clamping range >6.8 V. APPLICATIONS - puter and peripherals - Audio and video equipment - munication systems - Medical equipment. PINNING SOT339-1 DESCRIPTION Monolithic silicon zener diode in a SOT339-1 package (SO20) for 9 bit wide undershoot/overshoot clamping, bined with fast ESD transient suppression. book, halfpage 1 Top view MBK198 Fig.1 Symbol and pinning. Fig.2 Simplified outline. 1997 Sep 08 Philips Semiconductors Preliminary specification 9-fold ESD Transient Suppressor LIMITING VALUES (per diode) In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL IZ IF IFT IFSM IZSM Ptot Tstg Tj PARAMETER reverse current forward current feed-through current peak forward current peak reverse current total power dissipation storage temperature junction temperature CONDITIONS DC; Tamb = 25 °C DC; Tamb = 25 °C DC; Tamb = 25 °C; note 1 tp = 1 ms; square wave tp = 1 ms; square wave Tamb = 25 °C; note 2 - - 65 - 65 MIN. - - - - MAX. 20 100 100 4.5 2.5 0.95 +150 +150 UNIT m A m A m A A A W °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient; note 2 VALUE 135 UNIT K/W Note to the Limiting values and Thermal characteristics 1. Current is flowing from input to corresponding output. 2. One or more diodes loaded. ELECTRICAL CHARACTERISTICS (per diode) Tj = 25 °C unless otherwise specified. SYMBOL VZ VF VZSM IH RZ SZ CD PARAMETER reverse voltage forward voltage reverse surge voltage input high current zener impedance temperature coefficient of VZ input diode capacitance f = 1 MHz; VR = 0 f = 1 MHz; VR = 5.25 V CONDITIONS IZ = 250 µA IF = 100 m A tp = 1 ms; IZSM = 2.5 A VIN = 5.25 V IZ = 250 µA MIN. 6.4 - - - -...