NXP Semiconductors EC103D1W
SCR
| Part No. | EC103D1W |
|---|---|
| Datasheet | EC103D1W Download |
| Manufacturer |  NXP Semiconductors |
| Description | SCR |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Planar passivated for voltage ruggedness and reliability● Ultra sensitive gate
● Surface mountable package 3.
APPLICATIONS
● Electronic ballasts● Safety shut down and protection circuits
● Sensing circuits
● Smoke detectors
● Switched Mode Power Supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDRM repetitive peak offstate voltage VRRM repetitive peak reverse voltage ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C; state current tp = 10 ms; Fig. 4; Fig. 5 Tj junction temperature IT(RMS) RMS on-state current half sine wave; Tsp ≤ 114 °C; Fig. 2; Fig. 3 Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 9 Min Typ Max Unit - - 400 V - -
