EC103D1W Datasheet | NXP Semiconductors

SOT223 23 July 2014 Product data sheet 1. General description Planar passivated ultra sensitive gate Silicon Controlled Rectifier in a SOT223 surface mountable plastic package. 2. Features and benefits - Planar passivated for voltage ruggedness and reliability - Ultra sensitive gate - Surface mountable package 3. Applications - Electronic ballasts - Safety shut down and protection circuits - Sensing circuits - Smoke detectors - Switched Mode Power Supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDRM repetitive peak offstate voltage VRRM repetitive peak reverse voltage ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C; state current tp = 10 ms; Fig. 4; Fig. 5 Tj junction temperature IT(RMS) RMS on-state current half sine wave; Tsp ≤ 114 °C; Fig. 2; Fig. 3 Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 9 Min Typ Max...