WeEn Semiconductors EC103D1W
SCR
| Part No. | EC103D1W |
|---|---|
| Datasheet | EC103D1W Download |
| Manufacturer |  WeEn Semiconductors |
| Description | SCR |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Planar passivated for voltage ruggedness and reliability● Ultra sensitive gate
● Surface mountable package 3.
APPLICATIONS
● Electronic ballasts● Safety shut down and protection circuits
● Sensing circuits
● Smoke detectors
● Switched Mode Power Supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse voltage IT(AV) average on-state current half sine wave; Tsp ≤ 114 °C; Fig. 1 IT(RMS) RMS on-state current half sine wave; Tsp ≤ 114 °C; Fig. 2; Fig. 3 ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C; state current tp = 10 ms; Fig. 4; Fig. 5 half sine wave; Tj(init) = 25 °C; tp = 8.3 ms Tj junction temperature Static characteristics IGT gate trigger current Dynamic characteristics VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 9 dVD/dt rate of rise of off-state voltage VDM = 268 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit Min Typ Max Unit - - 400 V - - 0.5 A - - 0.8 A - - 8A - - 9A - - 125 °C - 3 12 µA - 150 - V/µs WeEn Semiconductors EC103D1W SCR 5.
