GD3160 Description
The GD3160 is an advanced, single-channel gate driver for IGBTs and SiC power devices. Integrated Galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control. Current and temperature sense minimizes IGBT/SiC stress during faults.
GD3160 Key Features
- Integrated Galvanic signal isolation (up to 8 kV)
- High gate current integrated: 15 A source/sink capable
- SPI interface for safety monitoring, configuration, and diagnostic reporting
- Supports high switching frequencies: PWM up to 100 kHz
- Fail-safe state management from LV and HV domain for user-selectable safe state
- Programmable gate voltage regulator
- Temperature sense patible with diode-based temperature sensors, NTC and PTC thermistors
- Configurable desaturation and current sense optimized for protecting SiC and IGBTs
- Integrated soft shutdown, two-level turn-off, optimized for unique gate drive requirements of SiC
- Real-time VCE and VGE reporting via INTA pin
GD3160 Applications
- Integrated Galvanic signal isolation (up to 8 kV)