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GD3160 - Advanced IGBT/SiC gate driver

Description

The GD3160 is an advanced, single-channel gate driver for IGBTs and SiC power devices.

Integrated Galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control.

Features

  • This section summarizes the key features, safety features, and regulatory approvals for the GD3160. 2.1 Key features.
  • Integrated Galvanic signal isolation (up to 8 kV).
  • High gate current integrated: 15 A source/sink capable.
  • SPI interface for safety monitoring, configuration, and diagnostic reporting.
  • Supports high switching frequencies: PWM up to 100 kHz.
  • Fail-safe state management from LV and HV domain for user-selectable safe state.
  • Progra.

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Other Datasheets by NXP Semiconductors

Part Number Description
GD3162 Advanced IGBT/SiC gate driver

Full PDF Text Transcription

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GD3160 Advanced IGBT/SiC gate driver Rev. 13 — 6 May 2024 Product data sheet 1 General description The GD3160 is an advanced, single-channel gate driver for IGBTs and SiC power devices. Integrated Galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control. Current and temperature sense minimizes IGBT/SiC stress during faults. Accurate and configurable undervoltage lockout (UVLO) provides protection while ensuring sufficient gate-drive voltage headroom. The GD3160 autonomously manages severe faults and reports faults and status via INTB and/or INTA pins and an SPI interface. It is capable of directly driving gates of most IGBTs and SiC MOSFETs.
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