GD3160 Datasheet | NXP Semiconductors

description The GD3160 is an advanced, single-channel gate driver for IGBTs and Si C power devices. Integrated Galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control. Current and temperature sense minimizes IGBT/Si C stress during faults. Accurate and configurable undervoltage lockout (UVLO) provides protection while ensuring sufficient gate-drive voltage headroom. The GD3160 autonomously manages severe faults and reports faults and status via INTB and/or INTA pins and an SPI interface. It is capable of directly driving gates of most IGBTs and Si C MOSFETs. Self test, control, and protection functions are included for design of high-reliability systems (ASIL C/D). The GD3160 meets the stringent requirements of automotive applications and is fully AEC-Q100 grade 1 qualified. NXP Semiconductors Advanced IGBT/Si C gate driver 2 Features and benefits This section summarizes the key features , safety features , and regulatory approvals for the GD3160. 2.1 Key features - Integrated Galvanic signal isolation (up to 8 k V) - High gate current integrated: 15 A source/sink capable - SPI interface for safety monitoring, configuration, and diagnostic reporting - Supports high switching frequencies: PWM up to 100 k Hz - Fail-safe state management from LV and HV domain for user-selectable safe state - Programmable gate voltage regulator - Temperature sense patible with diode-based temperature sensors, NTC and PTC thermistors - Configurable desaturation and current sense optimized for protecting Si C and IGBTs - Integrated soft shutdown, two-level turn-off, optimized for unique gate drive requirements of Si C - Real-time VCE and VGE reporting via INTA pin - Integrated ADC for monitoring parameters from HV domain - CMTI > 100 V/ns - patible with 200 to 1700 V IGBT/Si C, power range > 125 k W - Operating temperature range - 40 to 125 °C - Available in 5.0 or 3.3 V...