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GD3160 Datasheet Advanced IGBT/SiC gate driver

Manufacturer: NXP Semiconductors

General Description

The GD3160 is an advanced, single-channel gate driver for IGBTs and SiC power devices.

Integrated Galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control.

Current and temperature sense minimizes IGBT/SiC stress during faults.

Overview

GD3160 Advanced IGBT/SiC gate driver Rev.

13 — 6 May 2024 Product data sheet 1.

Key Features

  • This section summarizes the key features, safety features, and regulatory approvals for the GD3160. 2.1 Key features.
  • Integrated Galvanic signal isolation (up to 8 kV).
  • High gate current integrated: 15 A source/sink capable.
  • SPI interface for safety monitoring, configuration, and diagnostic reporting.
  • Supports high switching frequencies: PWM up to 100 kHz.
  • Fail-safe state management from LV and HV domain for user-selectable safe state.
  • Progra.