GD3162 - Advanced IGBT/SiC gate driver

Product Overview

NXP

GD3162 Advanced IGBT/SiC gate driver by NXP - Datasheet Preview — Datasheet preview – GD3162

Datasheet Details

Part number	GD3162
Manufacturer	NXP
File Size	200.84 KB
Description	Advanced IGBT/SiC gate driver
Datasheet	GD3162 Datasheet
Additional preview pages of the GD3162 datasheet.

Product details

Description

The GD3162 is an advanced, galvanically isolated, single-channel gate driver designed to drive the latest SiC and IGBT modules for xEV traction inverters.

Features

This section summarizes the key features, safety features, and regulatory approvals for the GD3162. 2.1 Key features.
Integrated galvanic signal isolation (up to 8 kV).
Integrated boost capability for increased drive strength: Up to 10 A/ 20 A/ 30 A source/ sink current available by gate strength selection.
SPI or 3-state enabled GS_ENH and GS_ENL low-voltage domain pins to dynamically control gate drive strength. Adjustment of gate strength up to 20 KHz supported.

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Published: Sep 10, 2024 |