• Part: GD3162
  • Description: Advanced IGBT/SiC gate driver
  • Manufacturer: NXP Semiconductors
  • Size: 200.84 KB
Download GD3162 Datasheet PDF
NXP Semiconductors
GD3162
description The GD3162 is an advanced, galvanically isolated, single-channel gate driver designed to drive the latest Si C and IGBT modules for x EV traction inverters. The device does this while enabling space savings and performance improvements through advanced gatedrive functionality. The GD3162 offers integrated galvanic isolation, a programmable interface via SPI, and advanced programmable protection features , such as overtemperature, desaturation, and current sense protection. GD3162 with integrated boost capability, can drive most Si C MOSFET and IGBT/Si C module gates directly and is able to shape the gate drive capability in order to improve the power device’s switching performance and reduce voltage stress. The control of the gate strength can be done using either SPI mands or the GS Enable Pins. GS_ENH logic controls the drive strength of the turn on, and GS_ENL controls the drive strength of the turn off. To further improve performance, these functions are designed to operate...