NXP Semiconductors GD3162
The GD3162 is an advanced, galvanically isolated, single-channel gate driver designed to drive the latest SiC and IGBT modules for xEV traction inverters. The device does this while enabling space savings and performance improvements through advanced gatedrive functionality. The GD3162 offers integrated galvanic isolation, a programmable interface via SPI, and advanced programmable protection features, such as overtemperature, desaturation, and current sense protection.| Part No. | GD3162 |
|---|---|
| Datasheet | GD3162 Download |
| Manufacturer |  NXP Semiconductors |
| Description | Advanced IGBT/SiC gate driver |
| Buy | Stock & Price |
FEATURES AND BENEFITS
This section summarizes the key features, safety features, and regulatory approvals for the GD3162. 2.1 Key features● Integrated galvanic signal isolation (up to 8 kV)
● Integrated boost capability for increased drive strength: Up to 10 A/ 20 A/ 30 A source/ sink current available by gate strength selection
● SPI or 3-state enabled GS_ENH and GS_ENL low-voltage domain pins to dynamically control gate drive strength. Adjustment of gate strength up to 20 KHz supported
● Dual gate pullup pins and dual gate pulldown pins for enhanced drive capability, synchronous adjustment of gate strength, reduced thermal loading during weak drive, and independent verification of each drive state operation
● SPI programmable ISEN/COMP setpoint, to allow the gate driver to automatically control gate drive strength based on high-voltage domain inputs. NXP Semiconductors GD3162 Advanced IGBT/SiC gate driver with dynamic gate strength adjust
● Temperature sense pins compatible with NTC...
