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GD3162

Manufacturer: NXP Semiconductors

GD3162 datasheet by NXP Semiconductors.

GD3162 datasheet preview

GD3162 Datasheet Details

Part number GD3162
Datasheet GD3162-NXP.pdf
File Size 200.84 KB
Manufacturer NXP Semiconductors
Description Advanced IGBT/SiC gate driver
GD3162 page 2 GD3162 page 3

GD3162 Overview

The GD3162 is an advanced, galvanically isolated, single-channel gate driver designed to drive the latest SiC and IGBT modules for xEV traction inverters. The device does this while enabling space savings and performance improvements through advanced gatedrive functionality. The GD3162 offers integrated galvanic isolation, a programmable interface via SPI, and advanced programmable protection.

GD3162 Applications

  • Integrated galvanic signal isolation (up to 8 kV)
  • Integrated boost capability for increased drive strength: Up to 10 A/ 20 A/ 30 A source/
  • SPI or 3-state enabled GS_ENH and GS_ENL low-voltage domain pins to dynamically
  • Dual gate pullup pins and dual gate pulldown pins for enhanced drive capability
  • SPI programmable ISEN/P setpoint, to allow the gate driver to automatically control gate drive strength based on high-voltage domain inputs
  • Temperature sense pins patible with NTC and PTC thermistors allow for local control of temperature based gate-drive strength, as well as power device temperatur

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