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GD3162 - Advanced IGBT/SiC gate driver

Description

The GD3162 is an advanced, galvanically isolated, single-channel gate driver designed to drive the latest SiC and IGBT modules for xEV traction inverters.

The device does this while enabling space savings and performance improvements through advanced gatedrive functionality.

Features

  • This section summarizes the key features, safety features, and regulatory approvals for the GD3162. 2.1 Key features.
  • Integrated galvanic signal isolation (up to 8 kV).
  • Integrated boost capability for increased drive strength: Up to 10 A/ 20 A/ 30 A source/ sink current available by gate strength selection.
  • SPI or 3-state enabled GS_ENH and GS_ENL low-voltage domain pins to dynamically control gate drive strength. Adjustment of gate strength up to 20 KHz supported.

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Other Datasheets by NXP Semiconductors

Part Number Description
GD3160 Advanced IGBT/SiC gate driver

Full PDF Text Transcription

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GD3162 Advanced IGBT/SiC gate driver with dynamic gate strength adjust Rev. 1 — 29 November 2022 Objective short data sheet 1 General description The GD3162 is an advanced, galvanically isolated, single-channel gate driver designed to drive the latest SiC and IGBT modules for xEV traction inverters. The device does this while enabling space savings and performance improvements through advanced gatedrive functionality. The GD3162 offers integrated galvanic isolation, a programmable interface via SPI, and advanced programmable protection features, such as overtemperature, desaturation, and current sense protection.
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