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KMZ10A1 Datasheet PDF

NXP Semiconductors KMZ10A1

The KMZ10A1 is an extremely sensitive magnetic field sensor, employing the magnetoresistive effect of thin-film permalloy. Its properties enable this sensor to be used in a wide range of applications such as navigation, current and earth magnetic field measurement etc. The special arrangement of the sensing chip allows the construction of coils for switching the auxiliary field (Hx) along the length axis of the sensor.
Part No. KMZ10A1
Datasheet KMZ10A1 Download
Manufacturer
NXP Semiconductors
Description Magnetic field sensor
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KMZ10A1 datasheet page 1 preview

DESCRIPTION

The sensor can be operated at any frequency between DC and 1 MHz. PINNING PIN 1 2 3 4 SYMBOL +VO GND −VO VCC

DESCRIPTION

output voltage ground output voltage supply voltage KMZ10A1 y handbook, halfpage Hx H 1 2 3 4 MGL420 Fig.1 Simplified outline. QUICK REFERENCE DATA SYMBOL VCC Hy Hx S Ss Rbridge Voffset PARAMETER DC supply voltage magnetic field strength auxiliary field sensitivity sensitivity (with switched Hx) bridge resistance offset voltage − −0.5 − − − 0.85 −1.5 MIN. 5 − 0.5 14 22 − − TYP. − +0.5 − − − 1.75 +1.5 MAX. V kA/m kA/m mV ⁄ V ---------------kA ⁄ m mV ⁄ V ---------------kA ⁄ m kΩ mV/V UNIT CIRCUIT DIAGRAM handbook, full pagewidth MLC716 1 +VO 2 GND 3 –VO V 4 CC Fig.2 Simplified circuit diagram. 1998 Apr 06 2 Philips Semiconductors Product specification Magnetic field sensor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCC Ptot Tstg Tbridge PARAMETER DC supply voltage total power dissipation storage temperature bridge operating temperature up to Tamb = 132 °C CONDITIONS − − −65 −40 MIN.
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