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KMZ10B - Magnetic field sensor

General Description

The KMZ10B is a sensitive magnetic field sensor, employing the magnetoresistive effect of thin-film permalloy.

Key Features

  • es 22, 08007.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D329 KMZ10B Magnetic field sensor Product specification Supersedes data of 1996 Nov 08 File under Discrete Semiconductors, SC17 1998 Mar 31 Philips Semiconductors Product specification Magnetic field sensor DESCRIPTION The KMZ10B is a sensitive magnetic field sensor, employing the magnetoresistive effect of thin-film permalloy. Its properties enable this sensor to be used in a wide range of applications for current and field measurement, revolution counters, angular or linear position measurement, proximity detectors, etc. PINNING PIN 1 2 3 4 SYMBOL +VO GND −VO VCC DESCRIPTION output voltage ground output voltage supply voltage 1 2 3 4 MGD806 KMZ10B handbook, halfpage Hy Hx Fig.1 Simplified outline SOT195.