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KMZ10B Datasheet PDF

NXP Semiconductors KMZ10B

The KMZ10B is a sensitive magnetic field sensor, employing the magnetoresistive effect of thin-film permalloy. Its properties enable this sensor to be used in a wide range of applications for current and field measurement, revolution counters, angular or linear position measurement, proximity detectors, etc.
Part No. KMZ10B
Datasheet KMZ10B Download
Manufacturer
NXP Semiconductors
Description Magnetic field sensor
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KMZ10B datasheet page 1 preview

DESCRIPTION

PINNING PIN 1 2 3 4 SYMBOL +VO GND −VO VCC

DESCRIPTION

output voltage ground output voltage supply voltage 1 2 3 4 MGD806 KMZ10B handbook, halfpage Hy Hx Fig.1 Simplified outline SOT195. QUICK REFERENCE DATA SYMBOL VCC Hy Hx S Rbridge Voffset PARAMETER bridge supply voltage magnetic field strength auxiliary field sensitivity bridge resistance offset voltage − −2 − − 1.6 −1.5 MIN. 5 − 3 4 − − TYP. 12 +2 − − 2.6 +1.5 MAX. V kA/m kA/m mV ⁄ V ---------------kA ⁄ m kΩ mV/V UNIT CIRCUIT DIAGRAM handbook, full pagewidth MLC716 1 +VO 2 GND 3 –VO 4 VCC Fig.2 Simplified circuit diagram. 1998 Mar 31 2 Philips Semiconductors Product specification Magnetic field sensor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCC Ptot Tstg Tbridge PARAMETER bridge supply voltage total power dissipation storage temperature bridge operating temperature up to Tamb = 130 °C CONDITIONS − − −65 −40 MIN. KMZ10B MAX. 12 120 +150 +150 V UNIT mW °C °C handbook, halfpage 150 MSA927 P tot (mW) 100 50 0 0 50 100 Tamb (o C) 150 Fig.3 Power derating curve.
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