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LFE15600X Datasheet NPN Microwave Power Transistor

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET LFE15600X NPN microwave power transistor Product specification Supersedes data of January 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power.

General Description

NPN silicon planar epitaxial microwave power transistor in a SOT448A glued cap metal ceramic flange package, with emitter connected to flange.

Top view book, 4 columns LFE15600X QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a mon emitter class AB amplifier.

MODE OF OPERATION Class AB (CW) f (GHz) 1.5 VCE (V) 24 ICQ (A) 0.2 PL1 (W) ≥55 Gpo (dB) ≥8 ηC (%) Zi/ZL (Ω) typ.50 see Figs 7 and 8 PINNING - SOT448A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION 1 c b 3 2 3 e MAM045 Fig.1 Simplified outline and symbol.

Key Features

  • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
  • Interdigitated structure provides high emitter efficiency.
  • Gold metallization realizes very good stability of the characteristics and excellent lifetime.
  • Multicell geometry gives good balance of dissipated power and low thermal resistance.
  • Internal input and output prematching ensures good stability and allows an easier design of wideband circuits.

More Datasheets from NXP Semiconductors

Part Number Description
LFE18500X NPN silicon planar epitaxial microwave power transistor

LFE15600X Distributor