LFE15600X Description
NPN silicon planar epitaxial microwave power transistor in a SOT448A glued cap metal ceramic flange package, with emitter connected to flange. Top view book, 4 columns LFE15600X QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a mon emitter class AB amplifier. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide.
LFE15600X Key Features
- Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
- Interdigitated structure provides high emitter efficiency
- Gold metallization realizes very good stability of the characteristics and excellent lifetime
- Multicell geometry gives good balance of dissipated power and low thermal resistance
- Internal input and output prematching ensures good stability and allows an easier design of wideband circuits
LFE15600X Applications
- SOT448A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION
- toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or di