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LFE18500X Key Features

  • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
  • Interdigitated structure provides high emitter efficiency
  • Gold metallization realizes very good stability of the characteristics and excellent lifetime
  • Multicell geometry gives good balance of dissipated power and low thermal resistance
  • Internal input and output prematching ensures good stability and allows an easier design of wideband circuits. APPLICATI

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LFE15600X NPN microwave power transistor

LFE18500X Description

NPN silicon planar epitaxial microwave power transistor in a FO-231 glued cap metal ceramic flange package, with emitter connected to flange. Top view handbook, 4 columns LFE18500X QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a mon emitter class AB amplifier. MODE OF OPERATION Class AB (CW) f (GHz) 1.85 VCE (V) 24 ICQ (A) 0.2 PL1 (W) ≥48 Gpo (dB) ≥7 ηC (%) Z i.

LFE18500X Applications

  • FO-231 PIN 1 2 3 collector base emitter connected to flange DESCRIPTION