LWE2010S Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET LWE2010S NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor Features - Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR - Interdigitated structure provides high emitter efficiency - Gold metallization realizes very good stability of the characteristics and excellent lifetime - Multicell geometry gives good balance of dissipated power and low thermal resistance. APPLICATIONS mon emitter class A power amplifiers at frequencies up to 2.3...