LWE2010S Datasheet NPN microwave power transistor

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET LWE2010S NPN microwave power transistor Product speciﬁcation Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product.

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Datasheet Details

Part number	LWE2010S
Manufacturer	NXP Semiconductors
File Size	74.48 KB
Description	NPN microwave power transistor
Download	LWE2010S Download (PDF)

General Description

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT446A metal ceramic flange package, with emitter connected to flange.

1 c 3 b e 2 MAM313 Fig.1 Simplified outline and symbol.

WARNING Product and environmental safety - toxic materials This product contains beryllium oxide.

Key Features

Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
Interdigitated structure provides high emitter efficiency.
Gold metallization realizes very good stability of the characteristics and excellent lifetime.
Multicell geometry gives good balance of dissipated power and low thermal resistance.

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