LWE2010S Description
DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT446A metal ceramic flange package, with emitter connected to flange. 1 c 3 b e 2 MAM313 Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide.
LWE2010S Key Features
- Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
- Interdigitated structure provides high emitter efficiency
- Gold metallization realizes very good stability of the characteristics and excellent lifetime
- Multicell geometry gives good balance of dissipated power and low thermal resistance
LWE2010S Applications
- SOT446A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION
- toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or di