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LWE2010S - NPN microwave power transistor

Description

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT446A metal ceramic flange package, with emitter connected to flange.

Fig.1 Simplified outline and symbol.

Features

  • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
  • Interdigitated structure provides high emitter efficiency.
  • Gold metallization realizes very good stability of the characteristics and excellent lifetime.
  • Multicell geometry gives good balance of dissipated power and low thermal resistance.

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Datasheet Details

Part number LWE2010S
Manufacturer NXP Semiconductors
File Size 74.48 KB
Description NPN microwave power transistor
Datasheet download datasheet LWE2010S Datasheet
Additional preview pages of the LWE2010S datasheet.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET LWE2010S NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very good stability of the characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance. APPLICATIONS Common emitter class A power amplifiers at frequencies up to 2.3 GHz.
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