LWE2015R Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET LWE2015R NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor Features - Interdigitated structure provides high emitter efficiency - Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR - Gold metallization realizes very stable characteristics and excellent lifetime - Multicell geometry gives good balance of dissipated power and low thermal resistance. handbook, halfpage PINNING - SOT446A PIN 1 2 3 collector base emitter DESCRIPTION APPL...