LWE2015R Description
APPLICATIONS mon emitter class-A amplifiers up to 2.3 GHz in CW conditions for military and professional applications. DESCRIPTION 2 1 c 3 b e MAM313 NPN silicon planar epitaxial microwave power transistor in a SOT446A metal ceramic studless package. 411 Fig.1 Simplified outline and symbol.
LWE2015R Key Features
- Interdigitated structure provides high emitter efficiency
- Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR
- Gold metallization realizes very stable characteristics and excellent lifetime
- Multicell geometry gives good balance of dissipated power and low thermal resistance
- SOT446A PIN 1 2 3 collector base emitter DESCRIPTION
LWE2015R Applications
- mon emitter class-A amplifiers up to 2.3 GHz in CW conditions for military and professional applications. DESCRIPTION
- toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or di