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LWE2015R - NPN microwave power transistor

Description

APPLICATIONS

Common emitter class-A amplifiers up to 2.3 GHz in CW conditions for military and professional applications.

NPN silicon planar epitaxial microwave power transistor in a SOT446A metal ceramic studless package.

Features

  • Interdigitated structure provides high emitter efficiency.
  • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR.
  • Gold metallization realizes very stable characteristics and excellent lifetime.
  • Multicell geometry gives good balance of dissipated power and low thermal resistance. handbook, halfpage LWE2015R.

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Datasheet Details

Part number LWE2015R
Manufacturer NXP Semiconductors
File Size 62.42 KB
Description NPN microwave power transistor
Datasheet download datasheet LWE2015R Datasheet
Additional preview pages of the LWE2015R datasheet.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET LWE2015R NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance. handbook, halfpage LWE2015R PINNING - SOT446A PIN 1 2 3 collector base emitter DESCRIPTION APPLICATIONS • Common emitter class-A amplifiers up to 2.
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