NXP Semiconductors LWE2015R
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.| Part No. | LWE2015R |
|---|---|
| Datasheet | LWE2015R Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN microwave power transistor |
| Buy | Stock & Price |
FEATURES
● Interdigitated structure provides high emitter efficiency● Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR
● Gold metallization realizes very stable characteristics and excellent lifetime
● Multicell geometry gives good balance of dissipated power and low thermal resistance. handbook, halfpage LWE2015R PINNING - SOT446A PIN 1 2 3 collector base emitter
DESCRIPTION
APPLICATIONS
● Common emitter class-A amplifiers up to 2.3 GHz in CW conditions for military and professional applications.DESCRIPTION
2 1 c 3 b e MAM313 NPN silicon planar epitaxial microwave power transistor in a SOT446A metal ceramic studless package. Marking code: 411 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class-A selective amplifier. MODE OF OPERATION Class-A (CW) f (GHz) 2.3 VCE (V) 16 IC (mA) 250 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide.
