LWE2015R Datasheet NPN microwave power transistor

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET LWE2015R NPN microwave power transistor Product speciﬁcation Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product.

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Datasheet Details

Part number	LWE2015R
Manufacturer	NXP Semiconductors
File Size	62.42 KB
Description	NPN microwave power transistor
Download	LWE2015R Download (PDF)

General Description

APPLICATIONS • Common emitter class-A amplifiers up to 2.3 GHz in CW conditions for military and professional applications.

DESCRIPTION 2 1 c 3 b e MAM313 NPN silicon planar epitaxial microwave power transistor in a SOT446A metal ceramic studless package.

Marking code: 411 Fig.1 Simplified outline and symbol.

Key Features

Interdigitated structure provides high emitter efficiency.
Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR.
Gold metallization realizes very stable characteristics and excellent lifetime.
Multicell geometry gives good balance of dissipated power and low thermal resistance. handbook, halfpage LWE2015R.

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