MMBT3906 - PNP switching transistor

NXP Semiconductors

General Description

PNP switching transistor in a SOT23 plastic package.

NPN complement: MMBT3904.

Note 1.

Key Features

Collector current capability IC =.
200 mA.
Collector-emitter voltage VCEO =.
40 V.

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MMBT3906 pnp switching transistor by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	MMBT3906
Manufacturer	NXP Semiconductors
File Size	83.89 KB
Description	PNP switching transistor
Datasheet	MMBT3906 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 MMBT3906 PNP switching transistor Product data sheet Supersedes data of 2000 Apr 11 2003 Mar 18 NXP Semiconductors PNP switching transistor Product data sheet MMBT3906 FEATURES • Collector current capability IC = −200 mA • Collector-emitter voltage VCEO = −40 V. APPLICATIONS • General switching and amplification. DESCRIPTION PNP switching transistor in a SOT23 plastic package. NPN complement: MMBT3904. MARKING TYPE NUMBER MMBT3906 MARKING CODE(1) 7B∗ Note 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. ∗ = W: Made in China. QUICK REFERENCE DATA SYMBOL PARAMETER VCEO IC collector-emitter voltage collector current (DC) MAX.