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MMBZ10VAL

Manufacturer: NXP Semiconductors

This datasheet includes multiple variants, all published together in a single manufacturer document.

MMBZ10VAL datasheet preview

Datasheet Details

Part number MMBZ10VAL
Datasheet MMBZ10VAL MMBZ5V6AL Datasheet (PDF)
File Size 125.70 KB
Manufacturer NXP Semiconductors
Description Low capacitance unidirectional double ESD protection diodes
MMBZ10VAL page 2 MMBZ10VAL page 3

MMBZ10VAL Overview

Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a mon anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. The devices are designed for ESD and transient overvoltage protection of up to two signal lines.

MMBZ10VAL Key Features

  • ESD protection up to 30 kV (contact
  • Bidirectional ESD protection of one line
  • IEC 61000-4-2; level 4 (ESD)
  • Low diode capacitance: Cd ≤ 280 pF
  • Rated peak pulse power: PPPM = 40 W
  • Ultra low leakage current: IRM = 5 nA
  • IEC 61643-321
  • AEC-Q101 qualified

MMBZ10VAL from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
ON Logo MMBZ10VAL 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors ON
nexperia Logo MMBZ10VAL ESD protection diode nexperia
Diodes Logo MMBZ10VAL 24W AND 40W PEAK POWER DUAL SURFACE MOUNT TVS Diodes
SEMIWILL Logo MMBZ10VAL ElectroStatic Discharge Protection Devices SEMIWILL
DIODES Logo MMBZ10VALAQ 24W AND 40W PEAK POWER DUAL SURFACE-MOUNT TVS DIODES
NXP Semiconductors logo - Manufacturer

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