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MMBZ12VAL

Manufacturer: NXP Semiconductors

This datasheet includes multiple variants, all published together in a single manufacturer document.

MMBZ12VAL datasheet preview

Datasheet Details

Part number MMBZ12VAL
Datasheet MMBZ12VAL MMBZ5V6AL Datasheet (PDF)
File Size 125.70 KB
Manufacturer NXP Semiconductors
Description Low capacitance unidirectional double ESD protection diodes
MMBZ12VAL page 2 MMBZ12VAL page 3

MMBZ12VAL Overview

Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a mon anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. The devices are designed for ESD and transient overvoltage protection of up to two signal lines.

MMBZ12VAL Key Features

  • ESD protection up to 30 kV (contact
  • Bidirectional ESD protection of one line
  • IEC 61000-4-2; level 4 (ESD)
  • Low diode capacitance: Cd ≤ 280 pF
  • Rated peak pulse power: PPPM = 40 W
  • Ultra low leakage current: IRM = 5 nA
  • IEC 61643-321
  • AEC-Q101 qualified

MMBZ12VAL from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
ON Logo MMBZ12VAL 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors ON
nexperia Logo MMBZ12VAL ESD protection diode nexperia
SEMIWILL Logo MMBZ12VAL ElectroStatic Discharge Protection Devices SEMIWILL
ON Logo MMBZ12VALT1 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors ON
ON Semiconductor Logo MMBZ12VALT1G Zener Diode ON Semiconductor
NXP Semiconductors logo - Manufacturer

More Datasheets from NXP Semiconductors

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