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NXP Semiconductors Technical Data
RF Power GaN Transistor
This 125 W RF power GaN transistor is capable of broadband operation from
30 to 2200 MHz and includes input matching for extended bandwidth performance. With its high gain and high ruggedness, this device is ideally
suited for CW, pulse and broadband RF applications. This part is characterized and performance is guaranteed for applications
operating in the 30 to 2200 MHz band. There is no guarantee of performance
when this part is used in applications designed outside of these frequencies.
Typical Performance: VDD = 50 Vdc, TA = 25C
Frequency (MHz)
Signal Type
30–940 (1,2)
CW
520 (1)
CW
940 (1)
CW
Pout (W) 90 125 80
Gps (dB) 16.0 18.0 18.4
D (%) 45.0 59.1 44.0
2200
Pulse (100 sec, 20% Duty Cycle)
200
17.0 57.
MMRF5017HS Datasheet
