MMRF5018HS Overview
MMRF5018HS RF Power GaN Transistor Rev. 0 July 2022 This 125 W CW RF power transistor is optimized for wideband operation up to 2700 MHz and includes input matching for extended bandwidth performance. With its high gain and high ruggedness, this device is ideally suited for CW, pulse and wideband RF applications.
MMRF5018HS Key Features
- Advanced GaN on SiC, offering high power density
- Decade bandwidth performance
- Enhanced thermal resistance packaging
- Input matched for extended wideband performance
- High ruggedness: > 20:1 VSWR