Overview: MMRF5018HS
RF Power GaN Transistor
Rev. 0 — July 2022 This 125 W CW RF power transistor is optimized for wideband operation up to 2700 MHz and includes input matching for extended bandwidth performance. With its high gain and high ruggedness, this device is ideally suited for CW, pulse and wideband RF applications.
This part is characterized and performance is guaranteed for applications operating in the 1–2700 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies. Typical 450–2700 MHz Performance: VDD = 50 Vdc, TA = 25°C, IDQ = 200 mA Frequency (MHz) Signal Type Pout (W) Gps hD (dB) (%) 450–2700 (1) CW 100 CW 12.0 40.0 Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR Pin Test (W) Voltage 2500 (2) Pulse > 20:1 at 5.0 Peak 50 (100 μsec, All Phase (3 dB 20% Duty Cycle) Angles Overdrive) 1. Measured in 450–2700 MHz reference circuit (page 4). 2. Measured in 2500 MHz production test fixture (page 7).
