NXP Semiconductors MPSA27
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.MPSA27 Specifications
- Package : TO-92
- Mount Type : Through Hole
- Polarity : NPN
- Current Rating : 800mA
- Max Collector Current : 500mA
- Terminals : 3
- Collector Base Voltage : 60V
- Emitter Base Voltage : 10V
- Collector Emitter Saturation Voltage : 1.5V
- Max Power Dissipation : 625mW
- Max Operating Temp : 150°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | MPSA27 |
|---|---|
| Datasheet | MPSA27 Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN Darlington transistors |
| Buy | Stock & Price |
FEATURES
● High current (max. 500 mA)● Low voltage (max. 60 V)
● High DC current gain (min. 10000).
APPLICATIONS
● High gain amplification. handbook, halfpage MPSA26; MPSA27 PINNING PIN 1 2 3 collector base emitterDESCRIPTION
2 1DESCRIPTION
NPN Darlington transistor in a TO-92; SOT54 plastic package. 1 2 3 TR1 TR2 MAM252 3 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO MPSA26 MPSA27 VCES collector-emitter voltage MPSA26 MPSA27 VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector VBE = 0 − − − − − − − −65 − −65 50 60 10 500 1 100 500 +150 150 +150 V V V mA A mA mW °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − 50 60 V V MIN.
