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MRF1K50GN Datasheet Rf Power Ldmos Transistors

Manufacturer: NXP Semiconductors

Overview: NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub--GHz aerospace and mobile radio applications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 500 MHz. Typical Performance: VDD = 50 Vdc Frequency (MHz) Signal Type Pout (W) Gps (dB) ηD (%) 87.5--108 (1,2) 230 (3,4) CW Pulse (100 μsec, 20% Duty Cycle) 1421 CW 1500 Peak 23.1 23.4 83.2 75.1 Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR Pin Test (W) Voltage Result 230 (3) Pulse > 65:1 at all 15 Peak 50 No Device (100 μsec, 20% Phase Angles (3 dB Degradation Duty Cycle) Overdrive) 1. Data from 87.5–108 MHz broadband reference circuit (page 5). 2. The values shown are the center band performance numbers across the indicated frequency range. 3. Data from 230 MHz narrowband production test fixture (page 11). 4. All data measured in fixture with device soldered to heatsink.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • High drain--source avalanche energy absorption capability.
  • Unmatched input and output allowing wide frequency range utilization.
  • Device can be used single--ended or in a push--pull configuration.
  • Characterized from 30 to 50 V for ease of use.
  • Suitable for linear.

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