MRF1K50GN Datasheet (PDF) Download
NXP Semiconductors
MRF1K50GN

Key Features

  • High drain--source avalanche energy absorption capability
  • Unmatched input and output allowing wide frequency range utilization
  • Device can be used single--ended or in a push--pull configuration
  • Characterized from 30 to 50 V for ease of use
  • Suitable for linear application
  • Integrated ESD protection with greater negative gate--source voltage range
  • Remended driver: MRFE6VS25N (25 W)

Applications

  • Industrial, Scientific, Medical (ISM)