MRF1K50GN Description
NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub--GHz aerospace and mobile radio applications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 500...
MRF1K50GN Key Features
- High drain--source avalanche energy absorption capability
- Unmatched input and output allowing wide frequency range utilization
- Device can be used single--ended or in a push--pull configuration
- Characterized from 30 to 50 V for ease of use
- Suitable for linear application
- Integrated ESD protection with greater negative gate--source voltage range
- Remended driver: MRFE6VS25N (25 W)