MRF1K50N - RF Power LDMOS Transistors

Features

High drain--source avalanche energy absorption capability.
Unmatched input and output allowing wide frequency range utilization.
Device can be used single--ended or in a push--pull configuration.
Characterized from 30 to 50 V for ease of use.
Suitable for linear.

NXP

MRF1K50N RF Power LDMOS Transistors by NXP - Datasheet Preview — Datasheet preview – MRF1K50N

Datasheet Details

Part number	MRF1K50N
Manufacturer	NXP
File Size	821.60 KB
Description	RF Power LDMOS Transistors
Datasheet	MRF1K50N Datasheet
Additional preview pages of the MRF1K50N datasheet.

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Full PDF Text Transcription

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NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub--GHz aerospace and mobile radio applications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 500 MHz. Typical Performance: VDD = 50 Vdc Frequency (MHz) Signal Type Pout (W) Gps (dB) ηD (%) 87.5--108 (1,2) 230 (3,4) CW Pulse (100 μsec, 20% Duty Cycle) 1421 CW 1500 Peak 23.1 23.4 83.2 75.

Published: Aug 5, 2019 |