MRF6VP3450HSR5 Description
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for broadband mercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large--signal, mon--source amplifier applications in 50 volt analog or digital television transmitter equipment. Typical DVB--T...
MRF6VP3450HSR5 Key Features
- Characterized with Series Equivalent Large--Signal Impedance Parameters
- Internally Input Matched for Ease of Use
- Qualified Up to a Maximum of 50 VDD Operation
- Integrated ESD Protection
- Designed for Push--Pull Operation
- Greater Negative Gate--Source Voltage Range for Improved Class C
- RoHS pliant
- In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel
- 0.5, +110
- 6.0, +10