Overview: Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large--signal, common--source amplifier applications in 50 volt analog or digital television transmitter equipment.
• Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 1400 mA, Pout = 90 Watts Avg., f = 860 MHz, 8K Mode, 64 QAM Power Gain — 22.5 dB Drain Efficiency — 28% ACPR @ 4 MHz Offset — --62 dBc @ 4 kHz Bandwidth
• Typical Broadband Two--Tone Performance: VDD = 50 Volts, IDQ = 1400 mA, Pout = 450 Watts PEP, f = 470--860 MHz Power Gain — 22 dB Drain Efficiency — 44% IM3 — --29 dBc
• Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz: 450 Watts CW 90 Watts Avg. (DVB--T OFDM Signal, 10 dB PAR, 7.
