Overview: Freescale Semiconductor Technical Data RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA, W--CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
Driver Application — 900 MHz
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 320 mA, Pout = 4.0 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) ηD ACPR (%) (dBc) 920 MHz 940 MHz 960 MHz 18.9 18.9 --49.6 19.1 19.5 --50.1 19.1 19.9 --48.8 • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 63 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
• Typical Pout @ 1 dB pression Point ≃ 42 Watts CW
Driver Application — 700 MHz
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 320 mA, Pout = 4.0 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) ηD ACPR (%) (dBc) 728 MHz 748 MHz 768 MHz 19.9 18.7 --49.9 20.1 19.1 --50.0 20.0 19.5 --49.
