MRF8P9040NBR1 Description
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA, W--CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. Driver Application 900 MHz Typical Single--Carrier W--CDMA Performance:.
MRF8P9040NBR1 Key Features
- Characterized with Series Equivalent Large--Signal Impedance Parameters
- Internally Matched for Ease of Use
- Integrated ESD Protection
- Greater Negative Gate--Source Voltage Range for Improved Class C
- Designed for Digital Predistortion Error Correction Systems
- Optimized for Doherty