Datasheet4U Logo Datasheet4U.com

MRF8S21140HR3 - RF Power Field Effect Transistors

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MRF8S21200HR6 RF Power Field Effect Transistors Freescale Semiconductor
MRF8S21200HSR6 RF Power Field Effect Transistors Freescale Semiconductor
MRF8S26060HR3 RF Power Field Effect Transistors Motorola Semiconductor
MRF8S26060HSR3 RF Power Field Effect Transistors Motorola Semiconductor
MRF8S26120HR3 RF Power Field Effect Transistor Motorola

Other Datasheets by NXP Semiconductors

Part Number Description
MRF8S21140HSR3 RF Power Field Effect Transistors
MRF8S9200NR3 RF Power Field Effect Transistor
MRF8P9040GNR1 RF Power Field Effect Transistors
MRF8P9040NBR1 RF Power Field Effect Transistors
MRF8P9040NR1 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Freescale Semiconductor Technical Data Document Number: MRF8S21140H Rev. 0, 5/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 970 mA, Pout = 34 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) hD Output PAR ACPR (%) (dB) (dBc) MRF8S21140HR3 MRF8S21140HSR3 2110-2170 MHz, 34 W AVG., 28 V W-CDMA, LTE LATERAL N-CHANNEL RF POWER MOSFETs 2110 MHz 2140 MHz 2170 MHz 17.7 32.1 17.9 31.7 18.1 31.7 6.2 -37.0 6.