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MRF8S21140HSR3 - RF Power Field Effect Transistors

Download the MRF8S21140HSR3 datasheet PDF. This datasheet also covers the MRF8S21140HR3 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (MRF8S21140HR3-NXP.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data Document Number: MRF8S21140H Rev. 0, 5/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 970 mA, Pout = 34 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) hD Output PAR ACPR (%) (dB) (dBc) MRF8S21140HR3 MRF8S21140HSR3 2110-2170 MHz, 34 W AVG., 28 V W-CDMA, LTE LATERAL N-CHANNEL RF POWER MOSFETs 2110 MHz 2140 MHz 2170 MHz 17.7 32.1 17.9 31.7 18.1 31.7 6.2 -37.0 6.