MRF8S21140HSR3 datasheet by NXP Semiconductors.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | MRF8S21140HSR3 |
|---|---|
| Datasheet | MRF8S21140HSR3 MRF8S21140HR3 Datasheet (PDF) |
| File Size | 258.69 KB |
| Manufacturer | NXP Semiconductors |
| Description | RF Power Field Effect Transistors |
|
|
Freescale Semiconductor Technical Data Document Number: 0, 5/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
View all NXP Semiconductors datasheets
| Part Number | Description |
|---|---|
| MRF8S21140HR3 | RF Power Field Effect Transistors |
| MRF8S9200NR3 | RF Power Field Effect Transistor |
| MRF8P9040GNR1 | RF Power Field Effect Transistors |
| MRF8P9040NBR1 | RF Power Field Effect Transistors |
| MRF8P9040NR1 | RF Power Field Effect Transistors |
| MRF101AN | RF Power LDMOS Transistors |
| MRF101BN | RF Power LDMOS Transistors |
| MRF13750H | RF Power LDMOS Transistors |
| MRF13750HS | RF Power LDMOS Transistors |
| MRF18060BLR3 | RF Power Field Effect Transistor |
