MRFE6VP61K25N
MRFE6VP61K25N is RF Power LDMOS Transistors manufactured by NXP Semiconductors.
Freescale Semiconductor Technical Data
Document Number: MRFE6VP61K25N Rev. 2, 4/2015
RF Power LDMOS Transistors
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 600 MHz.
Typical Performance: VDD = 50 Vdc
Frequency (MHz)
Signal Type
87.5- 108 (1,2)
230 (3)
Pulse (100 sec, 20% Duty Cycle)
Pout (W) 1309 CW 1250 Peak
Gps (d B) 24.1 23.0
D (%) 77.6 72.3
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal Type
VSWR
Pin Test
(W)
Voltage
Result
230 (3)
Pulse
> 65:1 at all 11.5 Peak
No Device
(100 sec, 20% Phase Angles (3 d B
Degradation
Duty...
