MRFE6VP61K25N Overview
Freescale Semiconductor Technical Data Document Number: 2, 4/2015 RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 600 MHz.
MRFE6VP61K25N Key Features
- Unmatched Input and Output Allowing Wide Frequency Range Utilization
- Device can be used Single--Ended or in a Push--Pull Configuration
- Qualified up to a Maximum of 50 VDD Operation
- Characterized from 30 to 50 V for Extended Power Range
- Suitable for Linear Application with Appropriate Biasing
- Integrated ESD Protection with Greater Negative Gate--Source Voltage Range
- Characterized with Series Equivalent Large--Signal Impedance Parameters
- Remended drivers: AFT05MS004N (4 W) or MRFE6VS25N (25 W)
