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MW6S010GMR1 Datasheet | NXP Semiconductors
Part:
MW6S010GMR1
Description:
RF Power Field Effect Transistor
Category:
Transistor
Manufacturer:
NXP Semiconductors
Size:
711.54 KB
MW6S010GMR1 Datasheet (PDF) Download
Related MW6S010GMR1 Datasheets
MW6S010MR1 RF Power Field Effect Transistor
NXP Semiconductors
MW6S010GMR1
Key Features
Typical Two - Tone Performance @ 960 MHz, VDD = 28 Volts, IDQ =
Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW Output Power
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