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MW6S010GMR1 - RF Power Field Effect Transistor

This page provides the datasheet information for the MW6S010GMR1, a member of the MW6S010MR1 RF Power Field Effect Transistor family.

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Datasheet Details

Part number MW6S010GMR1
Manufacturer NXP
File Size 711.54 KB
Description RF Power Field Effect Transistor
Datasheet download datasheet MW6S010GMR1 Datasheet
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Freescale Semiconductor Technical Data Replaced by MW6S010NR1/GNR1. There are no form, fit or function changes with this part replacement. N suffix indicates RoHS compliant part. RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.
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