MW6S010MR1
Key Features
- Typical Two - Tone Performance @ 960 MHz, VDD = 28 Volts, IDQ =
- Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW Output Power
- Part: MW6S010MR1
- Description: RF Power Field Effect Transistor
- Category: Transistor
- Manufacturer: NXP Semiconductors
- Size: 711.54 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| MW6S010NR1 | Freescale Semiconductor | LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MW6S010GNR1 | Freescale Semiconductor | LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |