NXP Semiconductors NX3008NBKS
350mA dual N-channel Trench MOSFET
| Part No. | NX3008NBKS |
|---|---|
| Datasheet | NX3008NBKS Download |
| Manufacturer |  NXP Semiconductors |
| Description | 350mA dual N-channel Trench MOSFET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Very fast switching● Low threshold voltage
● Trench MOSFET technology
● ESD protection up to 2 kV
● AEC-Q101 qualified 1.3
APPLICATIONS
● Relay driver● High-speed line driver
● Low-side loadswitch
● Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 350 mA; Tj = 25 °C [1] Conditions Tj = 25 °C Min -8 - Typ 1 Max 30 8 350 1.4 Unit V V mA Ω Per transistor Static characteristics (per transistor) [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. NXP Semiconductors NX3008NBKS 30 V, 350 mA dual N-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 4 5 6 Pinning information Symbol
DESCRIPTION
S1 G1 D2 S2 G2 D1 source TR1 gate TR1 drain TR2 source TR2 gate TR2 drain TR1 1 2 3 G1 G2 Simplified outline 6 5 4 Graphic symbol D1 D2 SOT363 (SC-88) S1 S2 017aaa256 3.
