NXP Semiconductors NX3008PBKW
MOSFET
| Part No. | NX3008PBKW |
|---|---|
| Datasheet | NX3008PBKW Download |
| Manufacturer |  NXP Semiconductors |
| Description | MOSFET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Very fast switching● Low threshold voltage
● Trench MOSFET technology
● ESD protection up to 2 kV
● AEC-Q101 qualified 1.3
APPLICATIONS
● Relay driver● High-speed line driver
● High-side loadswitch
● Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = -4.5 V; Tamb = 25 °C VGS = -4.5 V; ID = -200 mA; Tj = 25 °C [1] Conditions Tj = 25 °C Min -8 - Typ 2.8 Max Unit -30 8 V V -200 mA 4.1 Ω Static characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. NXP Semiconductors NX3008PBKW 30 V, 200 mA P-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 Pinning information Symbol
DESCRIPTION
G S D gate source drain G Simplified outline 3 Graphic symbol D 1 2 SOT323 (SC-70) S 017aaa259 3. Ordering information Table 3. Ordering information Package Name NX3008PBKW SC-70DESCRIPTION
plastic surface-mounted package; 3 leads Version SOT323 Type number 4.
