PBLS4003D Datasheet | NXP Semiconductors

description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. 1.2 Features I Low VCEsat (BISS) and resistor-equipped transistor in one package I Low threshold voltage (<1 V) pared to MOSFET I Low drive power required I Space-saving solution I Reduction of ponent count 1.3 Applications I Supply line switches I Battery charger switches I High-side switches for LEDs, drivers and backlights I Portable equipment 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max TR1; PNP low VCEsat transistor VCEO collector-emitter voltage open base IC collector current RCEsat collector-emitter saturation IC = - 500 m A; resistance IB = - 50 m A TR2; NPN resistor-equipped transistor [1] [2] - - - 40...