PBLS4003V Datasheet | NXP Semiconductors

description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor Equipped Transistor (RET) in one package. Table 1: Product overview Package Philips PBLS4003Y PBLS4003V SOT363 SOT666 JEITA SC-88 - Type number 1.2 Features s s s s s Low VCEsat (BISS) and resistor-equipped transistor in one package Low threshold voltage (< 1 V) pared to MOSFET Low drive power required Space-saving solution Reduction of ponent count 1.3 Applications s s s s Supply line switches Battery charger switches High-side switches for LEDs, drivers and backlights Portable equipment 1.4 Quick reference data Table 2: Symbol VCEO IC RCEsat Quick reference data Parameter collector-emitter voltage collector-current (DC) collector-emitter saturation resistance collector-emitter voltage IC = - 500 m A; IB = - 50 m A open base [1] Conditions open base Min - Typ 440 Max - 40 - 500 700 Unit V m A mΩ TR1; PNP low VCEsat transistor TR2; NPN resistor-equipped transistor VCEO 50 V Data Sheet 4 U . .. Philips Semiconductors PBLS4003Y; PBLS4003V 40 V PNP BISS loadswitch Quick reference data …continued Parameter output current bias resistor 1 (input) bias resistor ratio Conditions Min 7 0.8 Typ 10 1 Max 100 13 1.2 Unit m A kΩ Table 2: Symbol IO R1 R2/R1 [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2. Pinning information Table 3: Pin 1 2 3 4 5 6 Pinning Description emitter TR1 base TR1 output (collector) TR2 GND (emitter) TR2 input (base) TR2 collector TR1 1 2 3 001aab555 R1 R2 TR2 TR1 Simplified outline 6 5 4 Symbol 6 5...