Datasheet Summary
..
12 V, 6 A NPN low VCEsat (BISS) transistor
Rev. 01
- 7 May 2010 Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP plement: PBSS5612PA.
1.2 Features and benefits
- -
- -
- Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Exposed heat sink for excellent thermal and electrical conductivity Leadless small SMD plastic package...
