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PBSS4612PA - 6A NPN transistor

Description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.

PNP complement: PBSS5612PA.

Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors.
  • Exposed heat sink for excellent thermal and electrical conductivity.
  • Leadless small SMD plastic package with medium power capability 1.3.

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Full PDF Text Transcription

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PBSS4612PA 12 V, 6 A NPN low VCEsat (BISS) transistor Rev. 01 — 7 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement: PBSS5612PA. 1.2 Features and benefits „ Low collector-emitter saturation voltage VCEsat „ High collector current capability IC and ICM „ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors „ Exposed heat sink for excellent thermal and electrical conductivity „ Leadless small SMD plastic package with medium power capability 1.
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