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PBSS5120T - 20 V/ 1 A PNP low VCEsat (BISS) transistor

General Description

PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX.

20 1 2 250 UNIT V A A mΩ

Inductive load drivers (e.g.

relays, buzzers and motors).

Key Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High efficiency leading to less heat generation.
  • Reduced printed-circuit board requirements.
  • Cost effective alternative for MOSFETs in specific.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D088 PBSS5120T 20 V, 1 A PNP low VCEsat (BISS) transistor Product specification 2003 Sep 29 Philips Semiconductors Product specification 20 V, 1 A PNP low VCEsat (BISS) transistor FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency leading to less heat generation • Reduced printed-circuit board requirements • Cost effective alternative for MOSFETs in specific applications. APPLICATIONS • Power management – DC/DC conversion – Supply line switching – Battery charger – LCD backlighting. • Peripheral drivers – Driver in low supply voltage applications (e.g.