Datasheet4U Logo Datasheet4U.com

PBSS5120T Datasheet 20 V/ 1 A PNP Low Vcesat (biss) Transistor

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET M3D088 PBSS5120T 20 V, 1 A PNP low VCEsat (BISS) transistor Product specification 2003 Sep 29 Philips Semiconductors Product specification 20 V, 1 A PNP low VCEsat (BISS).

General Description

PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX.

−20 −1 −2 250 UNIT V A A mΩ – Inductive load drivers (e.g.

relays, buzzers and motors).

Key Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High efficiency leading to less heat generation.
  • Reduced printed-circuit board requirements.
  • Cost effective alternative for MOSFETs in specific.

PBSS5120T Distributor & Price

Compare PBSS5120T distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.