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PBSS5140T - PNP transistor

General Description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS4140T.

Key Features

  • I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I High efficiency due to less heat generation 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PBSS5140T 40 V, 1 A PNP low VCEsat BISS transistor Rev. 04 — 29 July 2008 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4140T. 1.2 Features I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I High efficiency due to less heat generation 1.3 Applications I General-purpose switching and muting I LCD backlighting I Supply line switching circuits I Battery-driven equipment (mobile phones, video cameras and handheld devices) 1.4 Quick reference data Table 1.