Datasheet Summary
40 V, 1 A PNP low VCEsat BISS transistor
Rev. 04
- 29 July 2008
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
NPN plement: PBSS4140T.
1.2 Features
I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I High efficiency due to less heat generation
1.3 Applications
I General-purpose switching and muting I LCD backlighting I Supply line switching circuits I Battery-driven equipment (mobile phones, video cameras and handheld devices)
1.4...