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PBSS5140V - 40 V low VCEsat PNP transistor

General Description

PNP low VCE sat transistor in a SOT666 plastic package.

NPN complement: PBSS4140V.

Key Features

  • 300 mW total power dissipation.
  • Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package.
  • Improved thermal behaviour due to flat leads.
  • Self alignment during soldering due to straight leads.
  • Low collector-emitter saturation voltage.
  • High current capability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS5140V 40 V low VCEsat PNP transistor Product specification Supersedes data of 2001 Oct 19 2002 Mar 20 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor FEATURES • 300 mW total power dissipation • Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package • Improved thermal behaviour due to flat leads • Self alignment during soldering due to straight leads • Low collector-emitter saturation voltage • High current capability APPLICATIONS • General purpose switching and muting • LCD back lighting • Supply line switching circuits • Battery driven equipment (mobile phones, video cameras and hand-held devices). DESCRIPTION PNP low VCE sat transistor in a SOT666 plastic package. NPN complement: PBSS4140V.