PBSS5240V Description
PNP transistor providing low VCEsat and high current capability in a SOT666 plastic package. 1 2 3 PBSS5240V QUICK REFERENCE DATA SYMBOL VCEO IC ICRP RCEsat PINNING PIN 1 2 3 4 5 6 collector collector base emitter collector collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. 2003 Jan 30 2 Philips Semiconductors Product specification 40...
PBSS5240V Key Features
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain (hFE) at high IC
- High efficiency leading to reduced heat generation
- Reduced printed-circuit board area requirements