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PBSS5240Y - PNP Transistor

General Description

PNP low VCEsat transistor in a SOT363 (SC-88) plastic package.

NPN complement: PBSS4240Y.

1.

= p: made in Hongkong.

= t: made in Malaysia.

Key Features

  • Low collector-emitter saturation voltage.
  • High current capability.
  • Improved device reliability due to reduced heat generation.
  • Replacement for SOT89/SOT223 standard packaged transistors due to enhanced performance.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET fpage MBD128 PBSS5240Y 40 V low VCEsat PNP transistor Product data sheet Supersedes data of 2001 Oct 24 2002 Feb 28 NXP Semiconductors 40 V low VCEsat PNP transistor Product data sheet PBSS5240Y FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standard packaged transistors due to enhanced performance. APPLICATIONS • Supply line switching circuits • Battery management applications • DC/DC converter applications • Strobe flash units • Heavy duty battery powered equipment (motor and lamp drivers). DESCRIPTION PNP low VCEsat transistor in a SOT363 (SC-88) plastic package. NPN complement: PBSS4240Y.