Datasheet Details
| Part number | PBSS5260PAP |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 271.72 KB |
| Description | PNP/PNP low VCEsat (BISS) transistor |
| Datasheet |
 PBSS5260PAP Datasheet
|
|
|
General Description
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/PNP complement: PBSS4260PANP.
NPN/NPN complement: PBSS4260PAN.
Key Features
- Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High efficiency due to less heat generation AEC-Q101 qualified 3.
