Datasheet Details
| Part number | PBSS5260QA |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 269.88 KB |
| Description | PNP low VCEsat (BISS) transistor |
| Datasheet |
 PBSS5260QA Datasheet
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General Description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
NPN complement: PBSS4260QA.
2.
Key Features
- Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) area requirements Solderable side pads AEC-Q101 qualified 3.
