PBSS5360Z Datasheet | NXP Semiconductors

description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN plement: PBSS4360Z. 2. Features and benefits - - - - Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High energy efficiency due to less heat generation AEC-Q101 qualified 3. Applications - - - - - - DC-to-DC conversion Supply line switching Battery charger LCD backlighting Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load driver (e.g. relays, buzzers and motors) 4. Quick reference data Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance tp ≤ 1 ms; single pulse IC = -2 A; IB = -200 m A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C Conditions open base Min Typ Max -60 -3 -6 225 Unit V A A mΩ Scan or click this QR code to view the latest information for this product NXP Semiconductors 60 V, 3 A PNP low VCEsat (BISS) transistor 5. Pinning information Table 2. Pin 1 2 3 4 Pinning information Symbol Description B C E C base collector emitter collector 1 2 3 Simplified outline Graphic symbol 2, 4 1 3 sym028 SC-73 (SOT223) 6. Ordering information Table 3. Ordering information Package Name PBSS5360Z SC-73 Description plastic surface-mounted package with increased heatsink; 4 leads Version SOT223 Type number 7. Marking Table 4. Marking codes Marking code P5360Z Type number PBSS5360Z 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IB IBM Ptot Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current base current peak base current total power dissipation tp ≤ 1 ms; single pulse [1] [2] [3] PBSS5360Z All information provided in this document is subject to...