PBSS5360X
PBSS5360X is PNP transistor manufactured by Nexperia.
description
PNP low VCEsat Breakthrough in Smal Signal (BISS) transitor in a medium power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package.
NPN plement: PBSS4360X
2. Features and benefits
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High energy efficiency due to less heat generation
- AEC-Q101 qualified
3. Applications
- DC-to-DC conversion
- Supply line switches
- Battery charger
- LCD backlighting
- Driver in low supply voltage applications (e.g. lamps and LEDs)
- Inductive load driver (e.g. relays, buzzers and motors)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VCEO collector-emitter voltage
IC ICM RCEsat collector current peak collector current collector-emitter saturation resistance
Conditions open base single pulse; tp ≤ 1 ms IC = -2 A; IB = -200 m A; Tamb = 25 °C
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02
[1]
Min Typ Max Unit
- - -60 V
- - -3 A
- - -6 A
- - 225 mΩ
Nexperia
60 V, 3 A PNP low VCEsat (BISS) transistor
5. Pinning information
Table 2. Pinning information Pin Symbol Description
1 E emitter 2 C collector 3 B base
Simplified outline
SOT89
Graphic...
