PBYR1645 Datasheet | NXP Semiconductors

FEATURES - Low forward volt drop - Fast switching - Reverse surge capability - High thermal cycling performance - Low thermal resistance PBYR1645 series SYMBOL QUICK REFERENCE DATA VR = 40 V/ 45 V k 1 a 2 IF(AV) = 16 A VF ≤ 0.57 V GENERAL DESCRIPTION Schottky rectifier diodes in a plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR1645 series is supplied in the conventional leaded SOD59 (TO220AC) package. PINNING PIN 1 2 tab DESCRIPTION cathode anode cathode SOD59 (TO220AC) tab LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS PBYR16 VRRM VRWM VR IF(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified forward current Repetitive peak forward current Non-repetitive peak forward current Peak repetitive reverse surge current Operating junction temperature Storage temperature Tmb ≤ 116 ˚C square wave; δ = 0.5; Tmb ≤ 131 ˚C square wave; δ = 0.5; Tmb ≤ 131 ˚C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. 40 40 40 40 16 32 135 150 1 150 175 MAX. 45 45 45 45 V V V A A A A A ˚C ˚C UNIT IRRM Tj Tstg THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. in free air TYP. MAX. UNIT 60 1.5 K/W K/W July 1998 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes Schottky barrier ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER VF IR Cd Forward voltage Reverse current Junction capacitance CONDITIONS IF = 16 A; Tj = 125˚C IF = 16 A VR = VRWM VR = VRWM; Tj = 100˚C VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C PBYR1645 series MIN. - TYP. MAX. UNIT 0.53 0.55 0.2 27 470 0.57 0.63 1.7 40 V V m A m A p F July...