• Part: PBYR2045CTX
  • Description: Rectifier diodes Schottky barrier
  • Category: Diode
  • Manufacturer: NXP Semiconductors
  • Size: 43.77 KB
Download PBYR2045CTX Datasheet PDF
NXP Semiconductors
PBYR2045CTX
PBYR2045CTX is Rectifier diodes Schottky barrier manufactured by NXP Semiconductors.
Philips Semiconductors Product specification Rectifier diodes Schottky barrier Features - Low forward volt drop - Fast switching - Reverse surge capability - High thermal cycling performance - Isolated mounting tab PBYR2045CTF, PBYR2045CTX series SYMBOL QUICK REFERENCE DATA VR = 40 V/ 45 V IO(AV) = 20 A VF ≤ 0.57V a1 1 k 2 a2 3 GENERAL DESCRIPTION Dual, mon cathode schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR2045CTF series is supplied in the SOT186 package. The PBYR2045CTX series is supplied in the SOT186A package. PINNING PIN 1 2 3 tab DESCRIPTION anode 1 (a) cathode (k) anode 2 (a) isolated SOT186 case SOT186A case 1 2 3 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS PBYR20 PBYR20 VRRM VRWM VR IO(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode Peak repetitive reverse surge current per diode Operating junction temperature Storage temperature Ths ≤ 84 ˚C square wave; δ = 0.5; Ths ≤ 78 ˚C square wave; δ = 0.5; Ths ≤ 78 ˚C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. MAX. 40CTF 40CTX 40 40 40 20 20 100 110 1 150 175 45CTF 45CTX 45 45 45 UNIT V V V A A A A A ˚C ˚C IRRM Tj Tstg October 1998 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes Schottky...